The band edge excitonic transitions were measured by the reflectivity and photoluminescence measurements.
利用反射及光萤光量测能隙边子跃迁。
The band edge excitonic transitions were measured by the reflectivity and photoluminescence measurements.
利用反射及光萤光量测能隙边子跃迁。
III-V semiconductor,isoelectronic trap,photoluminescence,Raman scattering,Time-resolved photoluminescence,ordered and disordered structure.
族半导体,等电子陷阱,光致发光,曼散射,时间分辨荧光谱,有序,无序
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