The results also show that green band emission is due to transition from conduction band to deep acceptor level which result in antiposition defect of OZn.
同样方法测量的530nm绿峰的发光衰变规律显示绿光主要源于导带至OZn反位缺陷深受主
级的跃迁。
The results also show that green band emission is due to transition from conduction band to deep acceptor level which result in antiposition defect of OZn.
同样方法测量的530nm绿峰的发光衰变规律显示绿光主要源于导带至OZn反位缺陷深受主级的跃迁。
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