Several amorphic carbon films with different thickness were deposited on single crystal silicon by means of pulse laser ablating graphet target at room temprature.
用激光烧蚀石墨
法在单晶硅衬底表面沉积了
同厚度的非晶碳膜。
Several amorphic carbon films with different thickness were deposited on single crystal silicon by means of pulse laser ablating graphet target at room temprature.
用激光烧蚀石墨法在单晶硅衬底表面沉积了同厚度的非晶碳膜。
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