The peaks of localized energy states were separated from the detrapping current curves by means of poling temperature scanning method.

通过热释极化温度扫描法分离出对解俘贡献的局域能级。

Also, High electric field annealing of stressed PMOSFET and detrapping of trapped electrons on the gate oxide are studied deeply.

研究了退化PMOS器件的高场退火效应和氧化层陷阱子的退陷阱机制。