The jitter is less than 3ns when the switch breakdown at front edge under the pluse with 400ns risetime, while the jitter shorts to about 1ns under the pulse with 80ns risetime.
引入紫外预电离作用后，开关
减小，400ns
沿脉冲作用下开关可小于3ns，80ns沿脉冲作用时开关约1ns。
The jitter is less than 3ns when the switch breakdown at front edge under the pluse with 400ns risetime, while the jitter shorts to about 1ns under the pulse with 80ns risetime.
引入紫外预电离作用后，开关减小，400ns沿脉冲作用下开关可小于3ns，80ns沿脉冲作用时开关约1ns。
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